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to ? 92m 1. collector 2. base 3. emitter to ? 92mod 1. emitter 2. collector 3. base to-92mod plastic-encapsulate transistor 2SA1371 transistor (pnp) features z high breakdown voltage z small reverse transition capacitance and high frequency maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -10a,i e =0 -300 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -300 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cut-off current i cbo v cb =-200v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe v ce =-10v, i c =-10ma 40 320 collector-emitter saturation voltage v ce(sat) i c =-20ma,i b =-2ma -0.6 v base-emitter saturation voltage v be (sat) i c =-20ma,i b =-2ma -1 v collector output capacitance c ob v cb =-30v,i e =0, f=1mhz 5 pf transition frequency f t v ce =-30v,i c =-10ma 100 mhz classification of h fe rank c d e f range 40-80 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -300 v v ceo collector-emitter voltage -300 v v ebo emitter-base voltage -5 v i c collector current -0.1 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification

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